Vishay lựa chọn công nghệ lô đa wafer G10-SiC của Aixtron
News: Suppliers
24 April 2024
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that its G10-SiC chemical vapor deposition (CVD) epitaxy production platform has been chosen by discrete semiconductor and passive electronic component maker Vishay Intertechnology Inc of Malvern, PA, USA for its in-house silicon carbide (SiC) epitaxy needs for power device manufacturing. The system will be delivered to Vishay’s automotive-certified Newport fab in South Wales. With its flexible dual-wafer-size configuration of 9x150mm and 6x200mm, the G10-SiC supports the transition between wafer diameters.
Vishay’s components are used in electronic devices and equipment in the industrial, computing, automotive, consumer, telecoms, aerospace, power supplies and medical markets.
“The new G10-SiC epi production tool delivers a leading cost structure for 200mm epitaxy, which meets Vishay’s productivity goals. This, in combination with an excellent uniformity performance on 200mm wafers, has made us choose Aixtron technology,” comments Danilo Crippa, senior director R&D for SiC development, at Vishay Intertechnology. “The Aixtron team has developed a unique solution for the tightest control of doping levels and uniformity on 200mm SiC wafers. This performance is maintained across the entire 6x200mm wafer batch with an impressive run-to-run stability,” he adds.
“Our strong customer service team in the South Wales Compound Semiconductor Cluster is dedicated to fully support the production ramp of Vishay’s SiC in-house epitaxy to the highest productivity within a short period of time,” says Dr Frank Wischmeyer, vice president SiC, at Aixtron.
Aixtron says that its G10-SiC system, which was launched in September 2022, has become the tool of record for both 150mm and 200mm silicon carbide epitaxy. With the latest innovations, the system delivers what are claimed to be best-in-class uniformities combined with the highest wafer throughput per m2 cleanroom space on the market, enabling the production of SiC power device epi at the lowest total cost of ownership. Uniformity performance and productivity are drivers for production yield and cost and are therefore drivers for electrification of the automotive and other industrial markets.
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