Transphorm và Weltrend bổ sung hệ thống GaN tích hợp 150mΩ và 480mΩ 650V trong các gói
News: Microelectronics
24 April 2024
Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion — and fabless firm Weltrend Semiconductor Inc of Hsinchu Science Park, Taiwan (which specializes in the design, testing, application development and distribution of mixed-signal/digital ICs in power supplies, motor controls and image processing) have announced the availability of two new GaN system-in-packages (SiPs). When combined with Weltrend’s flagship GaN SiP launched in March 2023, the new devices establish the first SiP product family based on Transphorm’s SuperGaN platform.
Sampling now, the new SiPs — WT7162RHUG24B and WT7162RHUG24C — integrate Weltrend’s high-frequency multi-mode (QR/valley switching) flyback PWM controller with Transphorm’s 150mΩ and 480mΩ 650V SuperGaN FETs, respectively. Like their 240mΩ predecessor (WT7162RHUG24A), the devices pair with USB PD or programmable power adapter controllers to provide a total adapter solution. They also offer several innovative features including the UHV valley tracking charge mode, adaptive OCP compensation, and adaptive green mode control that allow users to design high-quality power supplies more quickly and with fewer components using the simplest design approach.
“When we launched our first GaN SiP last year, it was an important milestone in our company’s evolution. It demonstrated a new GTM strategy for the AC-to-DC power market,” says Weltrend’s VP of marketing Wayne Lo. “We’re continuing to serve that space with a wider selection of devices designed to support a wider assortment of product power levels. A total packaged solution with Transphorm’s SuperGaN platform delivers design simplicity with unparalleled performance for devices now ranging from low 30W USB-C PD power adapters through to nearly 200W chargers, a unique Transphorm GaN capability,” he comments.
End-product manufacturers seek ways to develop new adapters with a reduced bill-of-materials (BOM) that offer versatility, fast charging and higher-power outputs. Additionally, in many cases they seek to deliver ‘one-size-fits-all’ chargers with multiple ports and/or multiple types of connections. All of this in a smaller, lighter-weight form factor.
Key advantages of Transphorm’s normally-off d-mode SuperGaN platform are claimed to include best-in-class robustness (+/-20V gate margin with a 4V noise immunity) and reliability (<0.05 FIT) with the ability to increase power density by 50% over silicon (to 26W/in3 in the standard 24-pin 8×8 QFN form-factor package, with power efficiency of >93%, allowing for low profile/small system footprint). Other key specifications include: wide output voltage operation (USB-C PD 3.0 and PPS 3.3~21V); and a maximum frequency of 180kHz. Weltrend’s SiP designs harness those advantages along with its own technologies to create a near plug-and-play solution that is said to speed design while reducing form-factor size.
“SiPs are an important device option when considering the needs of adapter and charger manufacturers,” says Tushar Dhayagude, Transphorm’s VP of worldwide sales & FAE (field application engineering). “These systems require effective power conversion that, while simple to use with integrated functionality, also minimize learning curves to ensure quick design-in,” he adds. “The first device released validated the performance and versatility of a SuperGaN SiP. The new devices announced today validate both our companies’ deepening commitment to arming customers with choice.”
Weltrend’s SuperGaN SiP family is optimized for use in high-performance, low-profile USB-C power adapters for mobile/IoT devices such as smartphones, tablets, laptops, headphones, drones, speakers, and cameras.
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