Samsung Electronics Opens Path to Chase TSMC with 3nm Foundry Collaboration with AMD – BusinessKorea
Samsung Electronics is expected to intensify its collaboration with the global fabless semiconductor company AMD.
According to industry sources and foreign media on May 28, Lisa Su, CEO of AMD, hinted in her keynote speech at ITF World 2024 that the company plans to adopt Samsung Electronics’ 3-nm semiconductors for its next-generation products.
She announced plans for mass production of next-generation semiconductors using the 3-nm Gate-All-Around (GAA) process. GAA technology, compared to the traditional FinFET process, can improve data processing speed and power efficiency. Samsung Electronics is the only company applying GAA technology at the 3-nm process level.
This effectively formalizes AMD’s collaboration with Samsung Electronics in 3-nm foundry services.
Given AMD’s expertise in central processing units (CPUs) and graphics processing units (GPUs), there is speculation that Samsung Electronics’ collaboration with AMD in the AI semiconductor sector will be strengthened. Samsung Electronics is currently supplying AMD with HBM3.
Previously, Samsung Electronics was the first in the world to mass-produce the 3-nm process using GAA technology in 2022, but had not secured major clients.
An industry insider stated, “For Samsung, the collaboration with AMD represents an opportunity to open the floodgates in chasing TSMC in the foundry sector.”
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