Qorvo/UnitedSiC ra mắt FET SiC Gen 4 1200V
News: Microelectronics
12 May 2022
Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched the new UF4C/SC next-generation series of 1200V Gen 4 silicon carbide (SiC) field-effect transistors (FETs) with what are claimed to be industry-leading figures of merit in on-resistance: 1.35mΩ-cm2 RDS(on)xA; 0.78Ω-μJ RDS(on)xEoss; 4.5Ω-pF RDS(on)xCoss,tr; and 0.9Ω-nC RDS(on)xQg.
All RDS(on) options (23mΩ, 30mΩ, 53mΩ and 70mΩ) are offered in the industry-standard 4-lead Kelvin source TO-247 package, providing cleaner switching at higher performance levels. The 53mΩ and 70mΩ devices are also available in the TO-247 3-lead package. The series has what is claimed to be excellent reliability, based on well-managed thermal performance (a result of an advanced silver-sinter die attach and advanced wafer-thinning process).
The new UF4C/SC series of 1200V Gen 4 SiC FETs is suited to mainstream 800V bus architectures in onboard chargers for electric vehicles (EVs), industrial battery chargers, industrial power supplies, DC/DC solar inverters, as well as welding machines, uninterruptible power supplies (UPS), and induction heating applications.
“Expanding our 1200V range with higher-performance Gen4 options allows us to better serve the engineers who are moving their bus designs to 800V,” says Anup Bhalla, chief engineer – Power Devices, UnitedSiC/Qorvo. “In electric vehicles, this move to higher voltages is inevitable and these new devices, with four different RDS(on) classes, help designers select the best possible SiC choice for every design.”
All 1200V SiC FETs are included in FET-Jet Calculator, a free online design tool that allows instant evaluation of efficiency, component losses, and junction temperature rise of devices used in a wide variety of AC/DC and isolated/non-isolated DC/DC converter topologies. Single and paralleled devices may be compared under user-specified heat-sinking conditions to enable optimum solutions.
Pricing (1000-up, FOB USA) for the new 1200V Gen 4 SiC FETs ranges from $5.71 for the UF4C120070K3S to $14.14 for the UF4SC120023K4S. All devices are available from authorized distributors.
Qorvo acquires silicon carbide power semiconductor supplier UnitedSiC
