Porotech và Powerchip hợp tác sản xuất hàng loạt đèn LED siêu nhỏ GaN-on-Si 200mm cho màn hình
News: LEDs
23 January 2024
Fabless micro-LED company Poro Technologies Ltd (a spin off from the Cambridge Centre for Gallium Nitride at the UK’s University of Cambridge that has developed porous GaN material and has an R&D center in Hsinchu, Taiwan) and Taiwan-based foundry Powerchip Semiconductor Manufacturing Corp (PSMC) have announced a strategic partnership in micro-LEDs for display applications.
This partnership will expedite the production of bright, high-pixel-density, small and low-cost micro-LEDs for displays with high-yield manufacturing for consumer applications. PSMC’s proprietary technologies in semiconductor front-end wafer manufacturing foundry combined with Porotech’s technologies in PoroGaN micro-LED-on-silicon (μLEDoS), Dynamic Pixel Tuning (DPT), GaN-on-silicon platform target the commercialization of micro-LED displays.
Mass producing Porotech’s micro-LED-on-silicon for pixelation in a semiconductor environment is a step ahead in the commercialization of displays for consumer application. PSMC’s strength in front-end semiconductor foundry is also expected to contribute during the mass-production stage.
The micro-LED-on-silicon for semiconductor manufacturing technology is expected to capitalize on the manufacturing precision for product performance, high-volume and low-cost display applications.
“Our collaboration with PSMC signifies a momentous step forward for mass-producing the micro-LED-on-silicon technology for display applications,” reckons Porotech’s CEO & founder Dr Tongtong Zhu. “An exciting road lies ahead with PSMC, propelling tremendous opportunity of commercialization with our mutual partners and customers.”
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