onsemi 1200V EliteSiC M3S devices enhance efficiency of EV and energy infrastructure applications
News: Microelectronics
9 May 2023
Power semiconductor IC supplier onsemi of Phoenix, AZ, USA has released the latest generation of 1200V EliteSiC silicon carbide (SiC) M3S devices. The new portfolio includes EliteSiC MOSFETs and modules that facilitate higher switching speeds to support the growing number of 800V electric vehicle (EV) on-board charger (OBC) and energy infrastructure applications, such as EV charging, solar and energy storage systems.
Also part of the portfolio are new EliteSiC M3S devices in half-bridge power integrated modules (PIMs) with low Rds(on) in a standard F2 package. Targeting industrial applications, the modules are suitable for DC–AC, AC–DC and DC–DC high-power conversion stages. They provide higher levels of integration with optimized direct bonded copper designs to enable balanced current sharing and thermal distribution between parallel switches. The PIMs are designed to deliver high power density in energy infrastructure, EV DC fast charging and uninterruptible power supplies (UPS).
“onsemi’s latest generation of automotive and industrial EliteSiC M3S products will allow designers to reduce their application footprint and system cooling requirements,” says Asif Jakwani, senior VP & general manager of onsemi’s Advanced Power Division. “This helps designers to develop high-power converters with higher levels of efficiency and increased power densities.”
The automotive-qualified 1200V EliteSiC MOSFETs are tailored for high-power OBCs up to 22kW and high-voltage to low-voltage DC–DC converters. M3S technology has been developed specifically for high-speed switching applications and has what are claimed to be the best-in-class figure of merits for switching losses.
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