Nexperia đặt hàng hệ thống Aixtron G10-SiC và G10-GaN cho nhà máy sản xuất ở Hamburg
News: Suppliers
16 July 2024
Discrete device designer and manufacturer Nexperia of Nijmegen, the Netherlands (which operates wafer fabs in Hamburg, Germany, and Hazel Grove Manchester, UK) is expanding its 200mm-wafer volume production of silicon carbide (SiC) and gallium nitride (GaN) power devices by placing a follow-up order for G10-SiC chemical vapor deposition (CVD) systems, complemented by another order for G10-GaN metal-organic chemical vapor deposition (MOCVD) systems, from deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany.
The Aixtron epitaxy systems will be installed in Nexperia’s fab in Hamburg, where the firm produces about 100 billion discrete semiconductors there annually (about a quarter of the global production of these types of components, it is claimed).
Aixtron’s equipment produces both GaN and SiC epitaxial layers for developing energy-efficient field-effect transistors (FETs) or metal-oxide field-effect transistors (MOSFETs) used in energy conversion applications such as data centers, solar inverters, electric vehicles or trains.
Nexperia has decades of experience in developing power devices and achieved revenues of more than $2.1bn in 2023. It launched its first GaN FET in 2019, followed by its first SiC MOSFET in 2023.
“With our G10 epitaxy solutions, Nexperia can implement its own growth strategy with the large-scale production of wide-bandgap semiconductors for commercial applications,” says Aixtron’s CEO Dr Felix Grawert. “Together, we are setting the pace for the industry’s transition to more energy-efficient SiC and GaN solutions,” he adds.
“Our strategic partnership with Aixtron is of great importance to us as we continue to expand our technological capabilities and market presence in the field of high-performance semiconductor production,” says Nexperia’s chief operating officer Achim Kempe. “The integration of the G10 systems will significantly improve our development and production capacities for wide-bandgap technology. We are building on Aixtron’s proven homogeneity and leveraging the additional productivity gains of Aixtron’s G10 systems to increase our production efficiently and cost effectively. With the new G10 systems in our Hamburg fab, we can further expand our production capacities”.
Nexperia investing $200m in Hamburg site to add wide-bandgap semiconductors
Nexperia using Aixtron equipment as it enters silicon carbide power electronics market
