Navitas ra mắt MOSFET SiC Gen-3 Fast 650V và 1200V
News: Microelectronics
7 June 2024
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has announced its new portfolio of Gen-3 ‘Fast’ (G3F) 650V and 1200V SiC MOSFETs optimized for fastest switching speed, highest efficiency, and increased power density for applications such as AI data-center power supplies, on-board chargers (OBCs), fast electric vehicle (EV) roadside super-chargers, and solar/energy-storage systems (ESS). The broad portfolio spans industry-standard packages from D2PAK-7 to TO-247-4, designed for demanding, high-power, high-reliability applications.
The G3F family is optimized for high-speed switching performance, resulting in a 40% improvement to hard-switching figures-of-merits (FOMs) compared with competition in CCM TP PFC systems. This can enable an increase in the wattage of next-generation AI power supply units (PSUs) up to 10kW, and an increase in power per rack from 30kW to 100–120kW.
The G3F GeneSiC MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology and are said to offer better-than-trench MOSFET performance while also providing superior robustness, manufacturability and cost than competition. G3F MOSFETs deliver high-efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors, it is claimed.
The ‘trench-assisted planar’ technology enables an extremely low RDS(ON) increase versus temperature, which results in the lowest power losses across the complete operating range and offers up to 20% lower RDS(ON) under real-life operation at high temperatures compared with competition, it is reckoned.
Additionally, all GeneSiC MOSFETs have what is claimed to be the highest-published 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling. GeneSiC MOSFETs are hence suitable for high-power, fast-time-to-market applications.
Navitas’ latest 4.5kW high-power-density AI server PSU reference design in CRPS185 form factor showcases the 650V-rated, 40mΩ G3F FETs for an interleaved CCM TP PFC topology. Alongside the GaNSafe power ICs in the LLC stage, a power density of 138W/inch3 and peak efficiency above 97% is realized, which comfortably achieves ‘Titanium Plus’ efficiency standards, now mandatory in Europe.
For the EV market, 1200V/34mΩ (G3F34MT12K) G3F FETs enable Navitas’ new 22kW, 800V bi-directional OBC and 3kW DC–DC converter to achieve a power density of 3.5kW/L and a peak efficiency of 95.5%.
“G3F sets a new standard for efficient, cool-running SiC performance, coupled with high reliability and robustness for high-power, high-stress systems,” says Dr Sid Sundaresan, senior VP of SiC technology & operations. “We’re pushing the boundaries of SiC, with up to 600kHz switching speeds, and hard-switching figures-of-merit up to 40% better than competition.”
Navitas highlights power semis for AI, EV, industrial, solar and energy storage at PCIM
