Mitsubishi Electric sẽ thử nghiệm các mô-đun nguồn silicon và SiC dòng J3 mới
News: Microelectronics
23 January 2024
Tokyo-based Mitsubishi Electric Corp is to release six new J3-Series power semiconductor modules for various electric vehicles (xEVs), featuring either a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) or a silicon-based RC-IGBT (insulated-gate bipolar transistor), with compact designs and scalability for use in the inverters of electric vehicles (EVs) and plug-in hybrid electric vehicles (PHEVs). All six J3-Series products will be available for sample shipments from 25 March.
The new power modules are being exhibited at the 38th Electronics R&D, Manufacturing and Packaging Technology Expo (NEPCON JAPAN 2024) at Tokyo Big Sight, Japan (24–26 January), as well as other exhibitions in North America, Europe, China and additional locations.
Development of these SiC products was partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO).
