Kỹ thuật ứng suất trong FET 2D (UCSB)
A new technical paper titled “Strain engineering in 2D FETs: Physics, status, and prospects” was published by researchers at UC Santa Barbara.
“In this work, we explore the physics and evaluate the merits of strain engineering in two-dimensional van der Waals semiconductor-based FETs (field-effect-transistors) using DFT (density functional theory) to determine the modulation of the channel material properties under strain, and subsequently, their effect on carrier transport properties, i.e., scattering rates, mobility, and then finally simulate and analyze dissipative current transport with a non-equilibrium Green’s function–Poisson’s equation self-consistent solver,” states the paper.
Find the technical paper here. Published September 2024.
Ankit Kumar, Lin Xu, Arnab Pal, Kunjesh Agashiwala, Kamyar Parto, Wei Cao, Kaustav Banerjee; Strain engineering in 2D FETs: Physics, status, and prospects. J. Appl. Phys. 7 September 2024; 136 (9): 090901. https://doi.org/10.1063/5.0211555.
