Infineon adds 650V TOLL portfolio to CoolSiC MOSFET family
News: Microelectronics
19 July 2023
As digitalization, urbanization and the rise of electro-mobility continue to shape the rapidly evolving world, the demand for power consumption is reaching unprecedented levels. Acknowledging energy efficiency as an important concern, Infineon Technologies AG of Munich, Germany is addressing these megatrends with its silicon carbide (SiC) CoolSiC MOSFET 650V in TO leadless (TOLL) packaging. The new SiC MOSFETs are enhancing Infineon’s comprehensive CoolSiC portfolio and are optimized for the lowest losses, the highest reliability and ease-of-use in applications such as SMPS for servers, telecom infrastructure as well as energy storage systems and battery formation solutions.
The CoolSiC 650V high-performance trench-based power SiC MOSFETs are offered in a very granular portfolio to best suit different target applications. The new family comes in a JEDEC-qualified TOLL package featuring a low parasitic inductance, allowing for higher switching frequency, reduced switching losses, good thermal management, and automated assembly. The compact form factor enables efficient and effective usage of the board space, empowering system designers to achieve exceptional power density, it is reckoned.
Picture: Infineon’s CoolSiC MOSFET 650V in TO leadless (TOLL) packaging, optimizing performance for various applications and offering high reliability, low losses and ease-of-use while enabling efficient power density and thermal management.
The CoolSiC MOSFET 650V showcases high reliability even in harsh environments, making them a suitable choice for topologies with repetitive hard commutation. The inclusion of .XT interconnect technology further enhances the devices’ thermal performance by reducing the thermal resistance (Rth) and thermal impedance (Zth). In addition, the new devices feature a gate threshold voltage (VGS(th)) greater than 4V for robustness against parasitic turn-on, a robust body diode, and what is claimed to be the strongest gate oxide (GOX) on the market, resulting in extremely low FIT (failures in time) rates.
While a cut-off voltage (VGS(off)) of 0V is generally recommended to simplify the driving circuit (unipolar driving), the new portfolio supports a wide driving interval of VGS voltage within the range of –5V (turn-off) to 23V (turn-on). This ensures ease-of-use and compatibility with other SiC MOSFETs and standard MOSFET gate-driver ICs. This is paired with higher reliability, reduced system complexity, and the enablement of automated assembly, reducing system and production costs and accelerating time-to-market, says Infineon.
The new CoolSiC MOSFET 650V in TOLL industrial-grade discretes is available in various drain–source on-resistance (RDS(on)) options from 22mΩ to 83mΩ and can be ordered now (107mΩ, 163mΩ and 260mΩ versions will be available on-demand).
