Đại học Nông nghiệp và Công nghệ Tokyo và Taiyo Nippon Sanso đạt được tốc độ phát triển MOVPE cao của màng oxit gali có độ tinh khiết cao
News: Suppliers
18 October 2023
Tokyo University of Agriculture and Technology’s professor Yoshinao Kumagai and assistant professor Ken Goto of the Institute of Engineering’s Division of Applied Chemistry and assistant professor Shogo Sasaki of the FLOuRISH Institute — in collaboration with Junya Yoshinaga, Guanxi Piao and Dr Kazutada Ikenaga of Taiyo Nippon Sanso Corp Innovation Unit’s CSE Department and Dr Yuzaburo Ban, fellow of Taiyo Nippon Sanso CSE Ltd — have achieved high-speed growth of high-purity β-gallium oxide ( β-Ga2O3) thick films using the metal-organic vapor phase epitaxy (MOVPE) method, which has been considered difficult.
Beta-phase gallium oxide (β-Ga2O3) is attracting attention as an important semiconductor for next-generation power devices, which are essential for increasing the efficiency of power control and conversion systems. This achievement is expected to lead to the practical application of mass-production technology for β-Ga2O3 power devices.
The research results have been published online on 28 September in the paper ‘High-speed growth of thick high-purity β-Ga2O3 layers by low-pressure hot-wall metalorganic vapor phase epitaxy’ in the journal Applied Physics Express (APEX).
Nippon Sanso’s first Ga2O3 MOCVD system installed and qualified
Taiyo Nippon Sanso Gallium oxide
