Qorvo ra mắt mô-đun đầu cuối 10W 2–18GHz nhỏ nhất
News: Microelectronics
9 June 2023
Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched what it claims is the first front-end power module covering the 2–18GHz frequency range.
The QPF0219 is a 10W multi-chip front-end module (FEM) that integrates a transmit/receive (T/R) switch, a limiter, a low-noise amplifier (LNA) and a power amplifier (PA), making it suitable for electronic warfare (EW), multi-function wideband arrays, radar and communications applications.
Available in an 8mm x 8mm air-cavity QFN package, the multi-die QPF0219 offers the optimal semiconductor technology for each functional block to maximize performance in challenging radar applications, delivering what is claimed to be exceptional performance in a highly compact footprint. The power amplifier and T/R switch utilize gallium nitride on silicon carbide (GaN-on-SiC) while the limiter and LNA use gallium arsenide (GaAs) technology. Transmit power is 10W saturated with 20% power-added efficiency (PAE) and large-signal gain is 13dB. The receiver noise figure is 4dB, small-signal gain is 14dB and the P1dB is 21dBm.
“The Qorvo portfolio of front-end modules continues to surpass every performance parameter – power, power-added efficiency and bandwidth – all in exceptionally compact packages,” says Doug Bostrom, general manager of Qorvo’s Defense & Aerospace group in the High-Performance Analog business. “These newest additions reflect our continued commitment to providing defense and communication system designers with the highest-performing solutions that reduce component count, footprint and costs.”
QPF0219 samples and production devices are available from Qorvo and authorized distributors.
