SBFET đa cổng dựa trên Ge được vận hành ở chế độ NDR (TU Wien, JKU)

A new technical paper titled “Implementation of Negative Differential Resistance-Based Circuits in Multigate Ge Transistors” was published by researchers at TU Wien and JKU (Johannes Kepler University).

Abstract:
“The co-integration of negative differential resistance (NDR) and Si-based CMOS technology might be a promising concept for multimode devices and circuits with enhanced performance and functionality. Here, we report on Ge-based multigate Schottky barrier field-effect transistors (SBFETs) operated in an NDR mode. A detailed and systematic study of the influence of electrostatic gating in single transistors as well as cascode circuits is carried out. We experimentally demonstrate that a single multigate SBFET can replace a cascode circuit of individual NDR devices. The realized devices and circuits contribute to compact logic gates and memory devices based on NDR complementing conventional CMOS technology.”

Find the technical paper here. November 2024.

A. Fuchsberger et al., “Implementation of Negative Differential Resistance-Based Circuits in Multigate Ge Transistors,” in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2024.3485600.