5N Plus thương mại hóa bằng sáng chế GaN-on-Si của mình
News: Microelectronics
21 March 2024
Specialty semiconductor and performance materials producer 5N Plus Inc (5N+) of Montreal, Québec, Canada is officially launching the commercialization rights for its portfolio of gallium nitride on silicon (GaN-on-Si) patents which, it says, can enable the rapid prototype development and first-to-market commercialization of novel vertical GaN-on-Si power devices by companies operating in the high-power electronics (HPE), electric vehicles (EV) and artificial intelligence (AI) server sectors.
Key patents enabling vertical GaN-on-Si devices
GaN is a mechanically stable, wide-bandgap semiconductor material with high heat capacity and thermal conductivity. Currently lateral GaN is primarily used in low-voltage (<400V) applications such as chargers, but novel vertical GaN-on-Si has the potential to replace silicon carbide (SiC), which is the current preferred material for medium- and high-voltage applications (i.e. EV inverters operating at 650V). SiC is expensive and not easily available, whereas GaN-on-Si is more efficient and cost-effective. Recent academic demonstrations utilizing key 5N+ patents have shown that vertical GaN-on-Si, as opposed to lateral GaN transistors showing destructive breakdown, offers soft breakdown with avalanche capability for safe, compact and more efficient devices.
“Our 54 patents have now been shown to be more high-performing and efficient than the current alternative through recent academic demonstrations,” says president & CEO Gervais Jacques. “As such, our portfolio of patents is uniquely positioned to enable industry-leading HPE and EV companies to rapidly develop and commercialize first-to-market vertical GaN-on-Si power devices that will revolutionize high-voltage semiconductor applications,” he reckons.
5N+ GaN-on-Si patent portfolio
The commercial rights of the 54 granted patents owned by 5N+ include mandatory use of large-diameter thick silicon substrates (over 1mm), combined with masking layers to filter the dislocations. Increasing the thickness of large-diameter silicon substrates in vertical GaN-on-Si devices enables increased voltage capacity without increasing the chip size. Also included in this patent is the ability to remove the substrate to form the backside contacts once the GaN growth is complete. In addition, the firm holds lateral GaN-on-Si patents for radio frequency (RF) applications that will enable next-generation 5G and 6G wireless communication components. 5N+ holds these patents through its multi-junction solar cell subsidiary AZUR SPACE Solar Power GmbH.
